Memory-preserving transistors could bypass the Boltzmann limit
Researchers have created a new theoretical framework that shows how memory-preserving "memtransistors" could overcome the intrinsic limits in efficiency faced by conventional semiconductor transistors, imposed by the laws of thermodynamics.
Image: Phys.org
Researchers have created a new theoretical framework that shows how memory-preserving "memtransistors" could overcome the intrinsic limits in efficiency faced by conventional semiconductor transistors, imposed by the laws of thermodynamics.
Originally published at Phys.org
